![]() Das Sarma, cond-mat/0211639.), which can be realized using already available materials. We introduce the concept of a magnetic bipolar transistor (MBT) (J. Zutic, Igor Fabian, Jaroslav Das Sarma, S. The data obtained are in good agreement with the results of numerical calculations and make it possible to describe both the motion of the front of the minority carriers and the steady state distribution of minority carriers across the collector in the saturation mode. In this approach, the leakage of the base current into the emitter and the recombination of non-equilibrium carriers in the base are taken into account. S.Ī simple analytical model is developed, capable of replacing the numerical solution of a system of nonlinear partial differential equations by solving a simple algebraic equation when analyzing the collector resistance modulation of a bipolar transistor in the saturation mode. We compare models with measurements where the base and collector peripheries decrease with increasing emitter diameters.Ĭollector modulation in high-voltage bipolar transistor in the saturation mode: Analytical approachĭmitriev, A. These resistances can be extracted from reverse Gummel (current vs Vbc with Vbc = 0) and from measurements of output resistances at zero collector voltage sweeps. The reverse base and collector resistances are therefore dominated by contact resistance, which is inversely proportional to the outer base and inner collector periphery lengths which are larger than the emitter lengths when the base and collector electrodes surround the emitter element. In heterojunction bipolar transistors (HBTs), the reverse base currents flow from the outer base periphery to the collector. ![]() Base and collector resistances in heterojunction bipolar transistorsĪnholt, R.
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